The CY7C109B / CY7C1009B is a high-performance CMOS static RAM organized as 131,072 words by 8 bits. It features high speed, low power consumption, and easy memory expansion.
The CY7C109B and CY7C1009B are high‑performance CMOS static RAM devices organized as 128K × 8 bits. They feature high speed (12 ns access), low active power (495 mW max) and TTL‑compatible I/O with easy memory expansion via CE, CEg and OE pins.
The document details electrical characteristics, switching timing, data‑retention behavior, and package dimensions for the 400‑mil‑wide SOJ/32‑pin TSOP (CY7C109B) and 300‑mil‑wide SOJ (CY7C1009B) options, along with maximum ratings and selection tables.
| Memory organization | 128K × 8 bits |
|---|---|
| Maximum access time | 12 ns |
| Maximum operating current | 90 mA |
| Supply voltage range | -0.5 V to +7.0 V |
| Package types | 400‑mil‑wide SOJ and 32‑pin TSOP |
The maximum access time is 12 ns.
The device can be stored from –65 °C to +150 °C.
It is offered in a 400‑mil‑wide SOJ and a 32‑pin TSOP package.
The data retention voltage is 2.0 V.