FDB024N06 N-Channel PowerTrench® MOSFET is a high performance N-Channel MOSFET produced by Fairchild Semiconductor Corporation. This device features low RDS(on), fast switching speed, low gate charge, and is suitable for applications such as DC/DC converters and synchronous rectification.
This document is a datasheet for the Fairchild Semiconductor FDB024N06, an N-Channel PowerTrench MOSFET designed for high power and current handling. The device features a 60V drain-to-source voltage rating and a maximum continuous drain current of 265A at 25°C. It is optimized for applications such as DC to DC converters and synchronous rectification, utilizing advanced trench technology to minimize on-state resistance.
The datasheet provides comprehensive electrical characteristics, including off-state breakdown voltage, on-state resistance, gate charge, and switching times. It also includes thermal characteristics, maximum safe operating area graphs, and mechanical dimensions for the D2-PAK package. The document specifies that the device is RoHS compliant and lists various test conditions and notes regarding pulse testing and thermal derating.
| Drain to Source Voltage | 60 V |
|---|---|
| Continuous Drain Current (Tj = 25°C) | 265 A |
| On-Resistance (Typical) | 1.8 mΩ |
| Operating Temperature Range | -55 to +175 °C |
| Package Type | D2-PAK |
The maximum continuous drain current at 25°C is 265A.
Yes, the device is RoHS compliant.
The typical on-state resistance is 1.8mΩ at Vgs = 10V and Id = 75A.