This document introduces the features, applications, maximum ratings, thermal characteristics of FDB029N06 N-Channel PowerTrench® MOSFET.
This document is a technical datasheet for the Fairchild Semiconductor FDBO29N06, an N-Channel PowerTrench MOSFET. The device features a maximum continuous drain current of 193A and utilizes advanced trench technology to minimize on-state resistance.
The datasheet provides comprehensive electrical characteristics, including breakdown voltage, gate threshold voltage, capacitance values, and switching times. It also includes typical performance curves for on-resistance, transfer characteristics, and thermal response, along with mechanical dimensions for the D²PAK package.
| Drain to Source Voltage (Vdss) | 60 V |
|---|---|
| Continuous Drain Current (Tj = 25°C) | 193 A |
| Package Type | D²PAK |
| Operating and Storage Temperature Range | -55 to +175 °C |
The device operates and stores in a temperature range from -55 to +175 °C.
The maximum drain-to-source voltage rating is 60 V.