This document describes the features and characteristics of the FDB031N08 N-Channel PowerTrench® MOSFET produced by Fairchild Semiconductor Corporation, including fast switching speed, low gate charge, high performance trench technology for extremely low on-state resistance, and high power and current handling capability.
This document is a technical datasheet for the Fairchild Semiconductor FDB031N08, an N-Channel PowerTrench MOSFET. The device is designed with advanced PowerTrench technology to minimize on-state resistance while maintaining superior switching performance. It operates at a maximum drain-to-source voltage of 75V and can handle continuous currents up to 235A under specific conditions.
| Drain to Source Voltage (Vdss) | 75 V |
|---|---|
| Continuous Drain Current (Tj = 25°C) | 235 A |
| Continuous Drain Current (Tj = 100°C) | 165 A |
| On-Resistance (Vgs=10V, Id=75A) | 3.1 mΩ |
| Power Dissipation (Tc = 25°C) | 375 W |
| Operating Temperature Range | -55 to +175 °C |
The maximum continuous drain current is 235 A when the temperature is 25°C.
The maximum power dissipation is 375 W at a temperature of 25°C.
The device operates and stores within a temperature range of -55 to +175 °C.