FDA59N30 is a 300V N-channel MOSFET from Fairchild Semiconductor. It features 59A maximum current, 0.056 ohms on-resistance, 77 nC gate charge, 80 pF capacitance, fast switching speed, 100% avalanche tested and improved dv/dt capability.
The document describes the Fairchild Semiconductor FDA59N30, a 300V N-Channel enhancement mode power field effect transistor produced using proprietary planar stripe DMOS technology. It is designed for high efficiency switched mode power supplies and active power factor correction applications.
The datasheet details absolute maximum ratings, electrical characteristics, and typical performance characteristics including on-resistance, capacitance, and switching times. It also includes test circuit diagrams for gate charge, resistive switching, and unclamped inductive switching, along with mechanical dimensions for the TO-3PN package.
| Drain-Source Voltage | 300 V |
|---|---|
| Drain Current - Continuous (Tg = 25°C) | 59 A |
| Drain Current - Pulsed | 236 A |
| Package Type | TO-3PN |
| Operating and Storage Temperature Range | -55 to +150 °C |
| Power Dissipation (Tg = 25°C) | 500 W |
| Thermal Resistance, Junction-to-Case | 0.25 °CAV |
| Total Gate Charge | 77 nC (Typical) |
The maximum continuous drain current at 25°C is 59 A.
The FDA59N30 is available in a TO-3PN package.
The operating and storage temperature range is from -55 to +150 °C.