The FDB035N10A N-Channel PowerTrench® MOSFET is a high-performance N-channel MOSFET produced by Fairchild Semiconductor Corporation. It has a RDS(on) of 3.0mΩ, an ID of 75A, a VDSS of 100V, a high switching speed and a low gate charge.
This document is a technical datasheet for the Fairchild Semiconductor FDBO35N10A, an N-Channel PowerTrench MOSFET. The device features a 100V drain-to-source voltage rating, a continuous current capability of up to 214A (silicon limited), and a typical on-resistance of 3.0mΩ at Vgs=10V.
The datasheet provides comprehensive electrical characteristics including off-state breakdown voltages, gate threshold ranges, capacitance values, and switching times. It also includes application areas such as DC to DC converters, synchronous rectification for server/telecom power supplies, battery chargers, and AC motor drives.
| Drain to Source Voltage (Vdss) | 100 V |
|---|---|
| Static Drain to Source On Resistance (Typical) | 3.0 mΩ |
| Operating Temperature Range | -55 to +175 °C |