The FDA70N20 200V N-Channel MOSFET is a low-resistance, high-performance N-channel enhancement mode power field effect transistor manufactured using Fairchild's proprietary planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high effi- cient switched mode power supplies and active power factor correction.
This document is a technical datasheet for the Fairchild Semiconductor FDA70N20, an N-channel enhancement mode power field effect transistor. The device utilizes proprietary planar stripe DMOS technology designed to minimize on-state resistance and provide superior switching performance for high-efficiency switched mode power supplies and active power factor correction applications.
The datasheet provides absolute maximum ratings, electrical characteristics including off and on states, dynamic parameters such as capacitance and gate charge, and typical performance characteristics illustrated through various graphs. It also includes mechanical dimensions for the TO-3PN package and standard disclaimer information regarding product status and life support policies.
| Drain-Source Voltage | 200 V |
|---|---|
| Continuous Drain Current (Tj = 25°C) | 70 A |
| Package Type | TO-3PN |
| Total Gate Charge (Typical) | 66 nC |
The maximum continuous drain current at a junction temperature of 25°C is 70 A.
The device is available in a TO-3PN package.
It uses Fairchild's proprietary planar stripe DMOS technology.