This document describes the features of Fairchild Semiconductor Corporation's UniFET TM FDA69N25 250V N-Channel MOSFET, including 69A current, 250V voltage, low charge, and fast switching.
This document is a technical datasheet for the Fairchild Semiconductor FDA69N25, a 250V N-Channel MOSFET. The device utilizes proprietary planar stripe DMOS technology to minimize on-state resistance and provide superior switching performance.
Key specifications include a maximum drain-source voltage of 250V, a continuous drain current of 69A at 25°C, and an on-resistance (RDS(on)) of 0.041Ω at VGS = 10V. The datasheet provides absolute maximum ratings, electrical characteristics, typical performance curves, and mechanical dimensions for the TO-3PN package.
| Drain-Source Voltage (VDSS) | 250 V |
|---|---|
| Continuous Drain Current at TC = 25°C (ID) | 69 A |
| On-Resistance (RDS(on)) @ VGS = 10V | 0.041 Ω |
| Package Type | TO-3PN |
The maximum continuous drain current is 69 A when the case temperature is 25°C.
The device has a maximum drain-source voltage rating of 250 V.
The maximum power dissipation is 480 W at a case temperature of 25°C.