The FDB035AN06A0 is a 60V, 80A, 3.5mΩ N-channel PowerTrench® MOSFET. It features low Miller charge, low Qrr body diode, UIS capability (single pulse and repetitive pulse), and is qualified to AEC Q101.
This document is a technical datasheet for the Fairchild Semiconductor FDBO35AN06A0, an N-Channel PowerTrench MOSFET designed for high-current applications. The device features a maximum continuous drain current of 80A and a typical on-resistance (RDS(on)) of 3.2mΩ at VGS=10V.
The datasheet provides comprehensive electrical characteristics, including breakdown voltage, threshold voltage, capacitance values, and switching times. It also details thermal resistance parameters relative to mounting pad area and includes safe operating area graphs for unclamped inductive switching applications.
| Drain to Source Voltage (VSS) | 60 V |
|---|---|
| Continuous Drain Current (Tg < 153°C, Veg = 10V) | 80 A |
| Continuous Drain Current (Ta=25°C, RthJC=4.3°C/W) | 22 A |
| Power Dissipation | 310 W |
| Operating and Storage Temperature Range | -55 to 175 °C |
| Thermal Resistance Junction to Case (TO-263) | 0.48 °C/W |
| Typical On-Resistance (VGS=10V, Tj=25°C) | 3.2 mΩ |
| Total Gate Charge (Qg(tot)) | 95 nC |
The typical drain to source on-resistance is 3.2mΩ when VGS is 10V.
Yes, the product has been designed to meet the requirements of AEC Q101.
The device supports a continuous drain current of 80A when Tg is less than 153°C and VGS is 10V.