The PDF document is the datasheet of FDB039N06 N-Channel PowerTrench® MOSFET. This MOSFET features low on-state resistance, fast switching speed and low gate charge, and is suitable for applications such as DC/DC converters and synchronous rectifiers.
This document is a datasheet for the Fairchild Semiconductor FDB039N06, an N-Channel PowerTrench MOSFET designed for high power and current handling capabilities. The device features a 60V drain-to-source voltage rating and a continuous drain current of 174A at 25°C. It is optimized for applications such as DC to DC converters and synchronous rectification, utilizing advanced trench technology to minimize on-state resistance.
| Drain to Source Voltage | 60 V |
|---|---|
| Package Type | TO-263 |
| Thermal Resistance, Junction to Case | 0.65 °C/W |