The FDB047N10 N-Channel PowerTrench® MOSFET is a N-Channel MOSFET produced by Fairchild Semiconductor Corporation. It features low RDS(on), fast switching speed, low gate charge, and is used in DC to DC converters and synchronous rectification.
This document is a technical datasheet for the Fairchild Semiconductor FDB047N10, an N-Channel PowerTrench MOSFET designed for high-performance applications such as DC to DC converters and synchronous rectification. The device features low on-state resistance (Rds(on)) of 3.9mQ typical at Vgs = 10V and Ip = 75A, along with fast switching speed capabilities.
| Drain to Source Voltage (Vdss) | 100 V |
|---|---|
| Continuous Drain Current (Package Limited) | 120 A |
| Static Drain to Source On Resistance (Typical) | 3.9 mΩ |
| Operating and Storage Temperature Range | -55 to +175 °C |
| Package Type | D2-PAK |
The typical on-state resistance (Rds(on)) is 3.9mΩ when Vgs = 10V and Ip = 75A.
The continuous package-limited current is 120 A at Tc = 25°C, with a pulsed rating of 656 A.