Industrial

The document describes the features and characteristics of the FCB11N60 600V N-Channel MOSFET produced by Fairchild Semiconductor Corporation, including 650V voltage, 0.32Ω RDS(on), 40nC ultra-low gate charge, and 95pF low effective output capacitance.

This document describes the features and characteristics of the FCB20N60 600V N-Channel MOSFET product from Fairchild Semiconductor Corporation, including 650V drain-source voltage, 0.15Ω on-resistance, low gate charge, and low output capacitance.

FCB20N60F is a 600V N-CHANNEL FRFET produced by Fairchild Semiconductor Corporation. Its main features are the extremely low on-resistance Rds(on)=0.15�, the fast recovery time trr = 160ns, the low output capacitance Coss.eff=165pF, and the 100% avalanche tested.

This is a FCB36N60N N-channel MOSFET from Fairchild, with a rated voltage of 600V and a rated current of 36A. Its features include: RDS(on) = 81mΩ (Typ.) @ VGS = 10V, ID = 18A; ultra low gate charge (Typ. Qg = 86nC); low effective output capacitance; 100% avalanche tested; RoHS compliant.

FCD4N60 600V N-Channel MOSFET is a new generation of high voltage MOSFET from Fairchild, with low on-resistance and low gate charge.

FCD5N60/FCU5N60 is a 600V N-channel MOSFET produced by Fairchild Corporation, with low RDS(on), low gate charge and low output capacitance.

This document describes the features and characteristics of the FCD7N60/FCU7N60 600V N-Channel MOSFET produced by Fairchild Semiconductor Corporation, including ultra-low gate charge, low output capacitance, and high voltage tolerance.

FCD9N60NTM N-Channel MOSFET 600V, 9A, 0.385mΩ is a MOSFET product launched by Fairchild Semiconductor Corporation. This product uses deep trench filling process and features RDS(on) = 0.330Ω ( Typ.)@ VGS = 10V, ID = 4.5A, ultra low gate charge (Typ.Qg = 17.8nC) and low effective output capacitance. It meets RoHS standards.

FCH22N60N is a high voltage super-junction MOSFET from Fairchild Semiconductor, which has low on-resistance, ultra low gate charge and high avalanche capability.

This document introduces the features of FCH25N60N N-Channel MOSFET, such as RDS(on), Qg, EAS, IAR, EAR, dv/dt, and PD.

FCH35N60 is a N-channel MOSFET from FAIRCHILD, features low on-resistance, low gate charge, low output capacitance, 100% avalanche tested.

SuperFETTM is Fairchild's proprietary, new generation of high voltage MOSFET family that utilizes an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.

FCH47N60NF is a 600V N-Channel MOSFET from Fairchild Semiconductor Corporation. It has RDS(on) = 57.5mΩ (Typ.) @ VGS = 10V, ID = 23.5A, Ultra Low Gate Charge (Typ. Qg = 121nC), Low Effective Output Capacitance, 100% Avalanche Tested, RoHS Compliant

FCH76N60N is a 600V N-Channel MOSFET from Fairchild Semiconductor Corporation. It employs a deep trench filling process and features 600V of maximum voltage, 36mΩ of on-resistance, 100% avalanche testing, and RoHS compliance.