RN1110,RN1111 is a NPN type bipolar transistor produced by Toshiba, which has the characteristic of integrated impedance and is suitable for switch, inverter circuit, interface circuit, driver circuit and other occasions.
The RN1110 and RN1111 are silicon NPN epitaxial transistors that incorporate a built‑in bias resistor, reducing part count and enabling smaller, easier‑to‑assemble circuits. They are offered in a range of resistance values to suit various circuit designs.
The datasheet lists key electrical parameters such as collector‑base voltage, collector‑emitter voltage, leakage currents, current gain, saturation voltage, transition frequency and parasitic capacitance, as well as handling and safety guidelines for designers using Toshiba semiconductor products. This manual is written in Japanese.
| Collector‑Base Voltage (VcBO) | 50 V |
|---|---|
| Collector‑Emitter Voltage (VcEO) | 50 V |
| Emitter‑Base Voltage (VEBO) | 5 V |
| Collector Current (Ic) | 100 mA |
| Collector Power Dissipation (Pc) | 100 mW |
| Maximum Junction Temperature (Tj) | 150 °C |
The maximum collector‑base voltage is 50 V.
They are silicon NPN epitaxial transistors with built‑in bias resistors.