SGS-THOMSON STP7NA40FI Manuals

STP7NA40STP7NA40FI is a fast power MOSFET produced by Dinghao Semiconductor. The typical RDS(on) is 0.82 ohms, the ±30V gate-source voltage rating, 100% avalanche tested, repetitive avalanche data at 100oC, low intrinsic capacitances, minimized gate charge, and reduced threshold voltage spread. Applications include high current, high speed switching, switch mode power supplies (SMPS), welding equipment and uninterruptible power supplies and motor drives.

STP7NA40 / STP7NA40FI N-channel enhancement mode fast power MOS transistor features typical RDS(on) = 0.82 ohm, ±30V gate to source voltage rating, 100% avalanche tested, repetitive avalanche data at 100oC, low intrinsic capacitances, minimized gate charge and reduced threshold voltage spread.