SGS-Thomson STP7NA40 / STP7NA40FI Power MOSFET Datasheet

STP7NA40STP7NA40FI is a fast power MOSFET produced by Dinghao Semiconductor. The typical RDS(on) is 0.82 ohms, the ±30V gate-source voltage rating, 100% avalanche tested, repetitive avalanche data at 100oC, low intrinsic capacitances, minimized gate charge, and reduced threshold voltage spread. Applications include high current, high speed switching, switch mode power supplies (SMPS), welding equipment and uninterruptible power supplies and motor drives.


SGS-Thomson STP7NA40 / STP7NA40FI Power MOSFET Datasheet - cover page
Brand
SGS-THOMSON
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
10
File format
PDF
File size
205 KB
Published
01 April, 2012
Updated
30 September, 2023
MD5 checksum
43595FFE2476884DC9A729BF680BE6C5

About this manual

The SGS‑Thomson STP7NA40 series are high‑voltage, fast‑switching power MOSFETs offered in TO‑220 and ISOWATT220 packages. They feature low on‑resistance, minimized gate charge, and robust avalanche capability for demanding applications such as SMPS, motor drives, and welding equipment.

The datasheet provides absolute maximum ratings, thermal characteristics, electrical parameters, and mechanical dimensions, along with test circuit diagrams for switching performance and avalanche testing.

What's inside

  • Description
  • Applications
  • Absolute Maximum Ratings
  • Thermal Data
  • Avalanche Characteristics
  • Electrical Characteristics
  • Switching On
  • Switching Off
  • Mechanical Data
  • Information

Specifications

Drain‑source voltage (VDS)400 V
Gate‑source voltage (VGS)+30 V
Avalanche current (repetitive)6.5 A

Frequently asked questions

What is the maximum drain‑source voltage for the STP7NA40?

The device is rated for a maximum drain‑source voltage of 400 V.

What is the allowed gate‑source voltage?

The gate‑source voltage rating is +30 V.

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