Key facts
- Brand
- SGS-THOMSON
- Model
- STP7NA60
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-04-01
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SGS-THOMSON STP7NA60 STP7NA60FI Manual(1)
The SGS‑Thomson STP7NA60 series are high‑voltage, fast‑switching power MOSFETs offered in TO‑220 and ISOWATT220 packages. The document provides detailed electrical ratings such as a 600 V drain‑source voltage, typical on‑resistance of 0.92 mΩ, and continuous drain currents of 7.2 A (STP7NA60) or 4.4 A (STP7NA60FI) at 25 °C.
Thermal performance data, avalanche characteristics, switching times, and mechanical dimensions for both package types are also listed, along with safety and usage notes. The datasheet is intended for designers of high‑current, high‑speed switching applications such as SMPS, welding converters, and motor drives.
SGS-THOMSON STP7NA60 specifications
| Drain‑Source Voltage (VDS) | 600 V |
|---|---|
| Gate‑Source Voltage (VGS) Rating | +30 V |
| Continuous Drain Current (25 °C) | 7.2 A (STP7NA60) / 4.4 A (STP7NA60FI) |
| Typical On‑Resistance (RDS(on)) | 0.92 mΩ |
| Total Power Dissipation (25 °C) | 125 W (STP7NA60) / 45 W (STP7NA60FI) |
| Junction‑to‑Case Thermal Resistance (TO‑220) | 2.78 °C/W |
| Junction‑to‑Ambient Thermal Resistance (TO‑220) | 62.5 °C/W |
| Avalanche Current (non‑repetitive) | 7.2 A |
All SGS-THOMSON STP7NA60 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum drain‑source voltage for the STP7NA60 MOSFET?
The device is rated for a maximum drain‑source voltage of 600 V.
What is the typical on‑resistance of the STP7NA60?
The typical on‑resistance is 0.92 mΩ.
What is the maximum drain‑source voltage for the STP7NA60?
The device is rated for a maximum drain‑source voltage of 600 V.
From: SGS-THOMSON STP7NA60 / STP7NA60FI Power MOSFET Datasheet
What is the typical on‑resistance of the MOSFET?
The typical static drain‑source on‑resistance is 0.92 Ω.
From: SGS-THOMSON STP7NA60 / STP7NA60FI Power MOSFET Datasheet