STP7NA40 / STP7NA40FI N-channel enhancement mode fast power MOS transistor features typical RDS(on) = 0.82 ohm, ±30V gate to source voltage rating, 100% avalanche tested, repetitive avalanche data at 100oC, low intrinsic capacitances, minimized gate charge and reduced threshold voltage spread.
The STP7NA40 and STP7NA40FI are high‑voltage, fast‑power MOSFETs designed for high‑current, high‑speed switching applications such as SMPS, welding converters, UPS and motor drives. They feature a 400 V drain‑source rating, low on‑resistance, minimized gate charge and robust avalanche capability.
The document provides absolute maximum ratings, detailed electrical characteristics (static and dynamic), thermal data, avalanche parameters, switching times, and mechanical dimensions for both TO‑220 (ISOWATT220) and ISOWATT220 packages. It also includes derating curves, thermal impedance plots, and test circuit diagrams.