Key facts
- Brand
- SGS-THOMSON
- Model
- STP6N25
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-04-01
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SGS-THOMSON STP6N25 STP6N25FI Manual(1)
The STP6N25 is a 250 V N‑channel power MOSFET designed for high‑speed switching applications such as UPS systems, motor control, audio amplifiers, industrial actuators and DC‑DC/DC‑AC converters. It is offered in TO‑220 and ISOWATT220 (isolated) packages and features avalanche‑tested robustness.
Key parameters include a continuous drain current of 4 A at 25 °C, a pulsed current rating of 24 A, a total power dissipation of up to 70 W (TO‑220) and typical on‑resistance of 0.7 Ω. Thermal resistance values, gate charge, and capacitance data are also provided for detailed design work.
SGS-THOMSON STP6N25 specifications
| Drain‑source voltage (VDS) | 250 V |
|---|---|
| Gate‑source voltage (VGS) | +20 V |
| Continuous drain current @ 25 °C | 4 A |
| Output capacitance (Coss) | 85 pF |
All SGS-THOMSON STP6N25 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum drain‑source voltage rating?
The device is rated for a maximum drain‑source voltage of 250 V.
What continuous drain current can the STP6N25 handle at 25 °C?
It can conduct up to 4 A continuously at 25 °C.
What is the maximum drain‑source voltage rating?
The device is rated for a maximum drain‑source voltage of 250 V.
Which package types are available for this MOSFET?
The part is offered in TO‑220 and ISOWATT220 (surface‑mount) packages.