SGS-THOMSON STP7NB40FP Manuals

Key facts

Brand: SGS-THOMSON
Model: STP7NB40FP
Industry: Industrial
Documents: 2
Languages: EN
Last added: 2012-04-01

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SGS-Thomson STP7NB40 / STP7NB40FP PowerMESH MOSFET Datasheet

Datasheet 4 pages · 112 KB · EN

The STP7NB40 and STP7NB40FP are N‑channel enhancement mode PowerMESH™ MOSFETs built with SGS‑Thomson's high‑voltage MESH OVERLAY™ process. The devices feature a patented strip layout and edge termination that provide very low on‑state resistance, high avalanche capability and minimized gate charge.

The datasheet lists absolute maximum ratings, thermal data, avalanche characteristics and a full set of electrical parameters such as drain‑source voltage, continuous drain current, total dissipation, capacitances and switching times. Typical applications include high‑current, high‑speed switching, SMPS, DC‑AC converters for welding, UPS and motor‑drive systems.

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SGS-THOMSON STP7NB40FP specifications

Drain‑source Voltage (Vds)	400 V
Continuous Drain Current (Id) at 25 °C	7 A (STP7NB40), 4.4 A (STP7NB40FP)
Total Power Dissipation at 25 °C	100 W (STP7NB40), 35 W (STP7NB40FP)
Typical On‑State Resistance (RDS(on))	0.75 Ω·mm²
Gate Charge (Qg)	21‑30 nC
Input Capacitance (Ciss)	705‑720 pF
Output Capacitance (Coss)	132‑175 pF
Avalanche Current (Ia)	7 A
Storage Temperature Range	-65 °C to 150 °C
Junction‑to‑Case Thermal Resistance (RθJC)	1.25 °C/W (STP7NB40), 3.57 °C/W (STP7NB40FP)

Source: SGS-Thomson STP7NB40 / STP7NB40FP PowerMESH MOSFET Datasheet

All SGS-THOMSON STP7NB40FP documents by type

Datasheet 2

Ratings, dimensions and ordering codes, for selection and design work.

Questions answered in these manuals

What is the maximum drain‑source voltage for the STP7NB40 MOSFET?

The maximum drain‑source voltage is 400 V.

From: SGS-Thomson STP7NB40 / STP7NB40FP PowerMESH MOSFET Datasheet

What is the continuous drain current at 25 °C for each device?

STP7NB40 can handle 7 A continuous, while STP7NB40FP is rated for 4.4 A continuous at 25 °C.