Key facts
- Brand
- Sanyo
- Model
- 2SK2631
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-04-01
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SANYO 2SK2631 MOSFET Datasheet
The 2SK2631 is an N‑Channel silicon MOSFET intended for ultrahigh‑speed switching applications. The document lists its absolute maximum ratings, electrical characteristics, and switching time test circuit details.
Key specifications include a drain‑to‑source voltage of 800 V, gate‑to‑source voltage of +30 V, and a typical on‑state resistance of about 10 mΩ. The datasheet also notes safety and reliability warnings for use in critical systems.
Sanyo 2SK2631 specifications
| Drain-to-Source Voltage (VDS) | 800 V |
|---|---|
| Gate-to-Source Voltage (VGS) | +30 V |
| Drain Current (DC) | 1 A |
Source: SANYO 2SK2631 MOSFET Datasheet
All Sanyo 2SK2631 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum drain-to-source voltage rating?
The MOSFET is rated for a maximum drain-to-source voltage of 800 V.
What is the maximum drain-to-source voltage for the 2SK2631?
The maximum drain-to-source voltage is 800 V.
From: Sanyo 2SK2631 Datasheet
What temperature range can the 2SK2631 operate and be stored in?
It can operate up to 150 °C and be stored from –55 °C to +150 °C.
From: Sanyo 2SK2631 Datasheet