Key facts
- Brand
- Sanyo
- Model
- 2SK2623
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-04-01
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SANYO 2SK2623 MOSFET Datasheet
Datasheet 4 pages · 149 KB · EN
The 2SK2623 is an N‑Channel silicon MOSFET designed for ultrahigh‑speed switching applications. It offers low on‑resistance and fast transition times, making it suitable for high‑frequency power conversion circuits.
The document lists absolute maximum ratings, typical electrical characteristics, and recommended operating conditions. It also includes safety and export‑control notices, as well as a test circuit for evaluating switching performance.
Sanyo 2SK2623 specifications
| Drain-to-Source Voltage (VDS) | 600 V |
|---|---|
| Gate-to-Source Voltage (VGS) | 30 V |
| Continuous Drain Current (Id) | 15 A |
| Pulse Drain Current (Idp) | 6 A |
| Power Dissipation (Pd) | 30 W |
| Static On‑Resistance (RDS(on)) | 5.5 mΩ (typ) |
| Input Capacitance (Ciss) | 300 pF |
| Output Capacitance (Coss) | 90 pF |
| Reverse Transfer Capacitance (Crss) | 45 pF |
| Total Gate Charge (Qg) | 8 nC |
All Sanyo 2SK2623 documents by type
Datasheet 2
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum drain‑to‑source voltage for the 2SK2623?
The device can withstand up to 600 V drain‑to‑source voltage.
What is the typical on‑resistance of the 2SK2623 at VGS = 15 V?
Typical RDS(on) is 5.5 mΩ when VGS is 15 V and Id is 0.8 A.