Key facts
- Brand
- Sanyo
- Model
- 2SK2624ALS
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-04-01
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SANYO 2SK2624ALS N-Channel MOSFET Datasheet
The SANYO 2SK2624ALS is a general‑purpose N‑channel silicon MOSFET intended for low‑ON‑resistance, low gate charge and ultrahigh‑speed switching applications. The datasheet provides absolute maximum ratings, typical electrical parameters and package dimensions for design reference.
Key specifications include a 600 V drain‑to‑source breakdown voltage, +30 V gate‑to‑source rating, 3.5 A continuous drain current, and a 25 W power dissipation capability at 25 °C ambient temperature. Package information for the TO‑220F (LS) case is also listed.
Sanyo 2SK2624ALS specifications
| Drain‑to‑Source Voltage (V_DSS) | 600 V |
|---|---|
| Gate‑to‑Source Voltage (V_GSS) | +30 V |
| Continuous Drain Current (I_D) | 3.5 A |
| Power Dissipation (P_D) | 25 W @ 25 °C |
| Input Capacitance (C_iss) | 550 pF |
| Total Gate Charge (Q_g) | 15 nC |
All Sanyo 2SK2624ALS documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum drain‑to‑source voltage for the 2SK2624ALS?
The maximum drain‑to‑source voltage is 600 V.
What gate‑to‑source voltage rating does the 2SK2624ALS support?
The device is rated for a gate‑to‑source voltage of +30 V.
What is the maximum drain‑to‑source voltage for the 2SK2624ALS?
The device can withstand up to 600 V drain‑to‑source voltage.
What is the recommended usage note for the 2SK2624ALS MOSFET?
Avoid using the MOSFET in the vicinity of highly charged objects.