Key facts
- Brand
- Sanyo
- Model
- 2SK2624LS
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-04-01
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Sanyo 2SK2624LS Datasheet
Datasheet 4 pages · 53 KB · EN
The Sanyo 2SK2624LS is an N‑Channel silicon MOSFET designed for ultrahigh‑speed switching applications. The document provides absolute maximum ratings, electrical characteristics, and typical performance graphs for the device.
Key parameters include a 600 V drain‑to‑source voltage, low on‑resistance, and fast switching times. The datasheet also contains safety and export‑control notices, as well as handling and storage guidelines.
Sanyo 2SK2624LS specifications
| Drain-to-Source Voltage (VDS) | 600 V |
|---|---|
| Gate-to-Source Voltage (VGS) | +30 V |
| Continuous Drain Current (ID) at 25 °C | 3 A |
| Pulse Drain Current (ID) (10 µs) | 12 A |
| Total Gate Charge (Qg) | 15 nC |
| Diode Forward Voltage | 0.98‑1.2 V |
All Sanyo 2SK2624LS documents by type
Datasheet 2
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum drain‑to‑source voltage for the 2SK2624LS?
The device is rated for a maximum drain‑to‑source voltage of 600 V.
What temperature range can the device be stored at?
It can be stored from –55 °C up to +150 °C.