The 2SK2631 is an N‑Channel silicon MOSFET intended for ultrahigh‑speed switching applications. The document lists its absolute maximum ratings, electrical characteristics, and switching time test circuit details.
Key specifications include a drain‑to‑source voltage of 800 V, gate‑to‑source voltage of +30 V, and a typical on‑state resistance of about 10 mΩ. The datasheet also notes safety and reliability warnings for use in critical systems.
| Drain-to-Source Voltage (VDS) | 800 V |
|---|---|
| Gate-to-Source Voltage (VGS) | +30 V |
| Drain Current (DC) | 1 A |
The MOSFET is rated for a maximum drain-to-source voltage of 800 V.