2SK2631 is a low ON resistance N-Channel Silicon MOSFET, suitable for Ultrahigh-Speed Switching Applications
The 2SK2631 is an N‑Channel silicon MOSFET designed for ultrahigh‑speed switching applications. It offers low ON resistance and a small total gate charge, making it suitable for high‑frequency circuits.
The document lists absolute maximum ratings, detailed electrical characteristics, and switching‑time test data, along with package dimensions and marking information. It also includes safety notices and export‑control statements relevant to designers and manufacturers.
| Drain-to-Source Voltage (V_DSS) | 800 V |
|---|---|
| Gate-to-Source Voltage (V_GSS) | +30 V |
| Drain Current (DC) (I_D) | 1 A |
| Drain Current (Pulse) (I_DP) | 3 A |
| Input Capacitance (Ciss) | 300 pF |
| Total Gate Charge (Qg) | 8 nC |
The maximum drain-to-source voltage is 800 V.
It can operate up to 150 °C and be stored from –55 °C to +150 °C.