Key facts
- Brand
- Sanyo
- Model
- 2SK2618ALS
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-04-01
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SANYO 2SK2618ALS N‑Channel MOSFET Datasheet
The SANYO 2SK2618ALS is a general‑purpose N‑channel silicon MOSFET designed for low ON‑resistance, low gate charge and ultrahigh‑speed switching. It is offered in a TO‑220F(LS) package and is intended for standard electronic equipment such as home appliances, AV gear and industrial devices.
The document provides absolute maximum ratings, detailed electrical characteristics, package dimensions and recommended usage notes. It also includes safety and export‑control information for designers integrating the device into their products.
Sanyo 2SK2618ALS specifications
| Drain‑to‑Source Voltage (VDS) | 500 V |
|---|---|
| Gate‑to‑Source Voltage (VGS) | +30 V |
| Continuous Drain Current (ID) | 6.5 A |
| Pulse Drain Current (IDP) | 20 A (10 µs, 1 % duty) |
| Avalanche Energy (Eas) | 138 mJ |
| Storage Temperature Range | -55 °C to +150 °C |
All Sanyo 2SK2618ALS documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum drain‑to‑source voltage for the 2SK2618ALS?
The device is rated for a maximum drain‑to‑source voltage of 500 V.
What is the recommended storage temperature range?
The MOSFET can be stored from –55 °C up to +150 °C.
What is the maximum drain‑to‑source voltage for the 2SK2618ALS?
The device can withstand up to 500 V between drain and source.
What continuous drain current can the 2SK2618ALS handle?
It is rated for a continuous drain current of 6.5 A at the specified temperature.