Key facts
- Brand
- Sanyo
- Model
- 2SK2617ALS
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-04-01
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SANYO 2SK2617ALS N-Channel MOSFET Datasheet
The 2SK2617ALS is a general‑purpose N‑Channel silicon MOSFET designed for low on‑resistance, low gate charge, and ultrahigh‑speed switching. It is intended for use in standard electronic equipment such as home appliances, AV gear, communication devices, and industrial equipment.
Key specifications include a 500 V drain‑to‑source breakdown voltage, 5 A continuous drain current, 16 A pulsed drain current, typical on‑resistance of 1.2 mΩ, input capacitance of 550 pF, output capacitance of 190 pF, total gate charge of 15 nC, and an avalanche energy rating of 88 mJ. The device is supplied in a TO‑220FI(LS) package and operates safely up to a case temperature of 150 °C.
Sanyo 2SK2617ALS specifications
| Drain‑to‑Source Voltage (V_DSS) | 500 V |
|---|---|
| Gate‑to‑Source Voltage (V_GSS) | +30 V |
| Continuous Drain Current (I_D) | 5 A |
| Pulsed Drain Current (I_DP) | 16 A |
| Avalanche Energy (E_as) | 88 mJ |
All Sanyo 2SK2617ALS documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum drain‑to‑source voltage rating?
The device is rated for a maximum drain‑to‑source voltage of 500 V.
What temperature range can the MOSFET be stored at?
It can be stored from –55 °C to +150 °C.
What is the maximum drain‑to‑source voltage for the 2SK2617ALS?
The device can withstand up to 500 V between drain and source.
What is the recommended storage temperature range?
The MOSFET can be stored from –55 °C to +150 °C.