Key facts
- Brand
- Sanyo
- Model
- 2SK2616
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-04-01
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SANYO 2SK2616 Datasheet
The 2SK2616 is an N‑Channel silicon MOSFET designed for ultrahigh‑speed switching applications. It offers low on‑resistance and fast transition times, making it suitable for high‑frequency power conversion circuits.
The document lists absolute maximum ratings, typical electrical parameters, and switching‑time test results, and includes safety notices that the device is not intended for life‑support, aircraft control, or other extremely high‑reliability applications.
Sanyo 2SK2616 specifications
| Drain-to-Source Voltage (V_DSS) | 500 V |
|---|---|
| Gate-to-Source Voltage (V_GSS) | +30 V |
| Drain Current (DC) (I_D) | 2 A |
| Drain Current (Pulse) (I_D(Pulse)) | 8 A |
| Power Dissipation (P_D) | 30 W |
| Channel Temperature (T_C) | 150 °C |
| Storage Temperature | 55 to +150 °C |
| Input Capacitance (C_iss) | 300 pF |
| Output Capacitance (C_oss) | 100 pF |
| Reverse Transfer Capacitance (C_rss) | 50 pF |
| Total Gate Charge (Q_g) | 8 nC |
| Static Drain‑to‑Source ON‑State Resistance (R_DS(on)) | 4.0 mΩ (typ) |
Source: SANYO 2SK2616 Datasheet
All Sanyo 2SK2616 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum drain‑to‑source voltage for the 2SK2616?
The device can withstand up to 500 V between drain and source.
From: SANYO 2SK2616 Datasheet
What is the typical on‑state resistance of the 2SK2616?
Typical R_DS(on) is about 4.0 mΩ at a drain current of 1 A and V_GS = 15 V.
From: SANYO 2SK2616 Datasheet
What is the maximum drain‑to‑source voltage for the 2SK2616?
The device can withstand up to 500 V between drain and source.
What is the recommended storage temperature range?
The MOSFET may be stored from –55 °C to +150 °C.