Key facts
- Brand
- Sanyo
- Model
- 2SK2628LS
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-04-01
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SANYO 2SK2628LS N-Channel MOSFET Datasheet
The 2SK2628LS is an N‑Channel silicon MOSFET designed for ultrahigh‑speed switching applications. It features low on‑resistance and low gate charge, making it suitable for high‑frequency power conversion and switching circuits.
Key specifications include a 600 V drain‑to‑source rating, 6 A continuous drain current, and fast switching times (23 ns turn‑on, 90 ns turn‑off). The device is supplied in a TO‑220FI(LS) package and includes detailed electrical characteristics for design reference.
Sanyo 2SK2628LS specifications
| Drain-to-Source Voltage (V_DSS) | 600 V |
|---|---|
| Gate-to-Source Voltage (V_GS) | +30 V |
| Continuous Drain Current (I_D) | 6 A |
| Pulse Drain Current (I_D(P)) | 24 A |
All Sanyo 2SK2628LS documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum drain‑to‑source voltage for the 2SK2628LS?
The device can withstand up to 600 V between drain and source.
What continuous drain current can the 2SK2628LS handle?
It is rated for a continuous drain current of 6 A.
What is the maximum drain‑to‑source voltage rating?
The device can withstand up to 600 V between drain and source.
What temperature range is allowed for storage?
The MOSFET may be stored from –55 °C to +150 °C.