2SK2628LS is a power MOSFET produced by SANYO. It has low ON-resistance and low Qg.
The 2SK2628LS is an N‑Channel silicon MOSFET designed for ultrahigh‑speed switching applications. It offers low on‑resistance and low gate charge, making it suitable for high‑frequency power conversion and switching circuits.
The datasheet lists absolute maximum ratings, electrical characteristics, capacitances, gate charge, and switching times, along with legal and safety notices. Key parameters such as drain‑to‑source voltage, current ratings, and on‑state resistance are provided to aid designers in selecting the device for their applications.
| Drain-to-Source Voltage (V_DSS) | 600 V |
|---|---|
| Gate-to-Source Voltage (V_GS) | +30 V |
| Drain Current (DC) (I_D) | 6 A |
| Pulse Drain Current (I_DP) | 24 A |
| On‑State Resistance (R_DS(on)) | 0.9 mΩ (typ) |
| Input Capacitance (C_iss) | 1050 pF |
| Output Capacitance (C_oss) | 320 pF |
| Reverse Transfer Capacitance (C_rss) | 180 pF |
| Total Gate Charge (Q_g) | 30 nC |
| Turn‑ON Delay Time (t_on) | 23 ns |
| Rise Time (t_r) | 35 ns |
| Turn‑OFF Delay Time (t_off) | 90 ns |
| Diode Forward Voltage (V_F) | 0.85–1.2 V |
The device can withstand up to 600 V between drain and source.
The MOSFET may be stored from –55 °C to +150 °C.