This document describes the features and characteristics of the 2SK2628LS product, including low ON-resistance and low Qg. It also lists the absolute maximum ratings and electrical characteristics of the product.
The 2SK2628LS is an N‑Channel silicon MOSFET designed for ultrahigh‑speed switching applications. It features low on‑resistance and low gate charge, making it suitable for high‑frequency power conversion and switching circuits.
Key specifications include a 600 V drain‑to‑source rating, 6 A continuous drain current, and fast switching times (23 ns turn‑on, 90 ns turn‑off). The device is supplied in a TO‑220FI(LS) package and includes detailed electrical characteristics for design reference.
| Drain-to-Source Voltage (V_DSS) | 600 V |
|---|---|
| Gate-to-Source Voltage (V_GS) | +30 V |
| Continuous Drain Current (I_D) | 6 A |
| Pulse Drain Current (I_D(P)) | 24 A |
The device can withstand up to 600 V between drain and source.
It is rated for a continuous drain current of 6 A.
The MOSFET is supplied in a TO‑220FI(LS) package.