2SK2618ALS is a low on-resistance, low gate capacitance, ultrahigh-speed switching field effect transistor, suitable for switch power supply, driving circuit and other applications.
The 2SK2618ALS is a general‑purpose N‑Channel silicon MOSFET designed for low ON‑resistance, low gate charge, and ultrahigh‑speed switching. It is intended for standard electronic equipment such as home appliances, AV gear, communication devices, and industrial equipment.
Key specifications include a 500 V drain‑to‑source breakdown voltage, 6.5 A continuous drain current, 20 A pulsed current, and a typical on‑resistance of about 1 Ω. The device is supplied in a TO‑220FI(LS) package and operates safely within a storage temperature range of –55 °C to +150 °C.
| Drain‑to‑Source Voltage (V_DSS) | 500 V |
|---|---|
| Gate‑to‑Source Voltage (V_GS) | +30 V |
| Continuous Drain Current (I_D) | 6.5 A |
| Pulsed Drain Current (I_D(P)) | 20 A (10 µs, 1 % duty) |
| Package | TO‑220FI(LS) |
| Storage Temperature | -55 °C to +150 °C |
The device can withstand up to 500 V between drain and source.
It is rated for a continuous drain current of 6.5 A at the specified temperature.
The MOSFET is supplied in a TO‑220FI(LS) package.
It can be stored from –55 °C up to +150 °C.