2SK2618ALS is a low on-resistance, low Qg, and ultra-high-speed switching transistor, suitable for switching power supplies and drivers.
The SANYO 2SK2618ALS is a general‑purpose N‑channel silicon MOSFET designed for low ON‑resistance, low gate charge and ultrahigh‑speed switching. It is offered in a TO‑220F(LS) package and is intended for standard electronic equipment such as home appliances, AV gear and industrial devices.
The document provides absolute maximum ratings, detailed electrical characteristics, package dimensions and recommended usage notes. It also includes safety and export‑control information for designers integrating the device into their products.
| Drain‑to‑Source Voltage (VDS) | 500 V |
|---|---|
| Gate‑to‑Source Voltage (VGS) | +30 V |
| Continuous Drain Current (ID) | 6.5 A |
| Pulse Drain Current (IDP) | 20 A (10 µs, 1 % duty) |
| Avalanche Energy (Eas) | 138 mJ |
| Storage Temperature Range | -55 °C to +150 °C |
The device is rated for a maximum drain‑to‑source voltage of 500 V.
The MOSFET can be stored from –55 °C up to +150 °C.
The continuous drain current is limited to 6.5 A at 25 °C.