This document is the product literature of 2SK2617ALS, which introduces the performance, characteristics and functions of the product.
The 2SK2617ALS is a general‑purpose N‑channel silicon MOSFET designed for low ON‑resistance, low gate charge, and ultrahigh‑speed switching. It is intended for use in standard electronic equipment such as home appliances, AV gear, communication devices, and industrial equipment.
Key specifications include a 500 V drain‑to‑source rating, 45 A continuous drain current, and typical on‑state resistance of about 1.2 mΩ. The datasheet also lists detailed electrical characteristics, package dimensions, and recommended usage notes to ensure safe and reliable operation.
| Drain-to-Source Voltage (VDS) | 500 V |
|---|---|
| Gate-to-Source Voltage (VGS) | +30 V |
The device can withstand up to 500 V between drain and source.
The MOSFET can be stored from –55 °C to +150 °C.