Sanyo Semiconductor Co.,Ltd. 2SK2617ALS datasheet
The 2SK2617ALS is a general‑purpose N‑Channel silicon MOSFET designed for low on‑resistance, low gate charge, and ultrahigh‑speed switching. It is intended for use in standard electronic equipment such as home appliances, AV gear, communication devices, and industrial equipment.
Key specifications include a 500 V drain‑to‑source breakdown voltage, 5 A continuous drain current, 16 A pulsed drain current, typical on‑resistance of 1.2 mΩ, input capacitance of 550 pF, output capacitance of 190 pF, total gate charge of 15 nC, and an avalanche energy rating of 88 mJ. The device is supplied in a TO‑220FI(LS) package and operates safely up to a case temperature of 150 °C.
| Drain‑to‑Source Voltage (V_DSS) | 500 V |
|---|---|
| Gate‑to‑Source Voltage (V_GSS) | +30 V |
| Continuous Drain Current (I_D) | 5 A |
| Pulsed Drain Current (I_DP) | 16 A |
| Avalanche Energy (E_as) | 88 mJ |
The device is rated for a maximum drain‑to‑source voltage of 500 V.
It can be stored from –55 °C to +150 °C.
It is supplied in a TO‑220FI(LS) package.