This document is the feature parameters table of SANYO 2SK2616, mainly including the product's package size, rated voltage, maximum voltage, drain current, on-resistance and other parameters.
The 2SK2616 is an N‑Channel silicon MOSFET designed for ultrahigh‑speed switching applications. It offers low on‑resistance and fast transition times, making it suitable for high‑frequency power conversion circuits.
The document lists absolute maximum ratings, typical electrical parameters, and switching‑time test results, and includes safety notices that the device is not intended for life‑support, aircraft control, or other extremely high‑reliability applications.
| Drain-to-Source Voltage (V_DSS) | 500 V |
|---|---|
| Gate-to-Source Voltage (V_GSS) | +30 V |
| Drain Current (DC) (I_D) | 2 A |
| Drain Current (Pulse) (I_D(Pulse)) | 8 A |
| Power Dissipation (P_D) | 30 W |
| Channel Temperature (T_C) | 150 °C |
| Storage Temperature | 55 to +150 °C |
| Input Capacitance (C_iss) | 300 pF |
| Output Capacitance (C_oss) | 100 pF |
| Reverse Transfer Capacitance (C_rss) | 50 pF |
| Total Gate Charge (Q_g) | 8 nC |
| Static Drain‑to‑Source ON‑State Resistance (R_DS(on)) | 4.0 mΩ (typ) |
The device can withstand up to 500 V between drain and source.
Typical R_DS(on) is about 4.0 mΩ at a drain current of 1 A and V_GS = 15 V.
No, SANYO states the device is not intended for extremely high‑reliability applications such as life‑support or aircraft control systems.