2SK2616 is a N-Channel Silicon MOSFET produced by SANYO. It features low on-resistance and low gate capacitance.
The 2SK2616 is an N‑Channel silicon MOSFET designed for ultrahigh‑speed switching applications. It offers low ON‑resistance and low gate charge, making it suitable for high‑frequency power conversion circuits.
The datasheet lists absolute maximum ratings, detailed electrical characteristics, and switching‑time test results. It also includes package dimensions and safety notices for use in critical systems.
| Drain-to-Source Voltage (VDS) | 500 V |
|---|---|
| Gate-to-Source Voltage (VGS) | +30 V |
| Continuous Drain Current (ID) – DC | 2 A |
| Pulse Drain Current (ID) – Pulse | 8 A |
The device can withstand up to 500 V between drain and source.
The MOSFET may be stored from –55 °C to +150 °C.