Key facts
- Brand
- NXP
- Model
- BUK9E3R2-40B
- Category
- TrenchMOS
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2014-05-23
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NXP BUK9E3R2-40B FET Datasheet
Datasheet 14 pages · 271 KB · EN
The document describes the NXP BUK9E3R2-40B, a logic-level N-channel enhancement mode Field-Effect Transistor (FET) utilizing TrenchMOS technology. It is packaged in plastic and qualified to AEC standards specifically for use in automotive critical applications.
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Datasheet 2
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum operating temperature for this FET?
The device is rated for a maximum junction temperature of 175 °C.
What is the maximum drain-source voltage rating?
The maximum drain-source voltage is 40 V.
What is the maximum junction temperature rating for this FET?
The device is rated for a maximum junction temperature of 175 °C.