Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
This document is a product data sheet for the BUK9E3R2-40B, a logic level N-channel enhancement mode Field-Effect Transistor (FET) utilizing TrenchMOS technology. The device is available in a plastic I2PAK (SOT226) package and is qualified to AEC standards for use in automotive critical applications, such as 12 V loads, motors, lamps, and solenoids.
| Package type | I2PAK plastic single-ended package |
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The device is rated for a maximum junction temperature of 175 °C.