Key facts
- Brand
- NXP
- Model
- BUK98150-55A
- Category
- TrenchMOS
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2014-05-26
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NXP BUK98150-55A FET Datasheet
The NXP BUK98150-55A is a logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. It is designed and qualified to the appropriate AEC standard for use in automotive critical applications, featuring low conduction losses due to low on-state resistance and suitability for logic level gate drive sources.
This document provides technical specifications, pinning information, ordering details, and electrical characteristics for the device. Key applications include 12 V and 24 V loads, automotive and general purpose power switching, as well as driving motors, lamps, and solenoids.
All NXP BUK98150-55A documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
Is the BUK98150-55A qualified for automotive use?
Yes, the product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
What is the maximum total power dissipation for this FET?
The maximum total power dissipation is 8 W when the temperature is 25 °C.
What is the primary application of this FET?
It is suitable for automotive and general purpose power switching, including motors, lamps, and solenoids.
Is this device compatible with logic level gate drive sources?
Yes, it is suitable for logic level gate drive sources due to its low on-state resistance.