Key facts
- Brand
- NXP
- Model
- BLF8G09LS-400PW
- Category
- Transistor
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2014-05-20
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NXP BLF8G09LS-400PW 8G09LS-400PGW transistor
The document details the BLF8G09LS-400P(G)W Power LDMOS transistor designed for RF power amplifiers in base stations and multi-carrier applications within the 716 MHz to 960 MHz frequency range. Key features include excellent ruggedness, high efficiency, low thermal resistance, and internal matching for ease of use.
Read onlineNXP BLF8G09LS-400PW specifications
| Power | 400 W |
|---|---|
| Frequency range | 716 MHz to 960 MHz |
| Drain-source voltage | 65 V |
| Gate-source voltage | -0.5 to +13 V |
| Junction temperature | 225 °C |
| Power gain | 20.6 dB |
| Drain efficiency | 30 % |
| Adjacent channel power ratio | -35 dBc |
Source: NXP BLF8G09LS-400PW Power LDMOS Transistor Datasheet
All NXP BLF8G09LS-400PW documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What are the applications for this transistor?
It is designed for RF power amplifiers in base stations and multi-carrier applications.
Is the device RoHS compliant?
Yes, the design is compliant to Directive 2002/95/EC regarding Restriction of Hazardous Substances.
What is the frequency range for the BLF8G09LS-400PW?
The transistor is designed for base station applications at frequencies from 716 MHz to 960 MHz.
What is the maximum junction temperature?
The maximum junction temperature is 225 °C.