Key facts
- Brand
- NXP
- Model
- BUK9880-55
- Category
- FET
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2014-05-26
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NXP BUK9880-55 TrenchMOS FET Datasheet
The NXP BUK9880-55 is a logic level N-channel enhancement mode Field-Effect Transistor (FET) utilizing TrenchMOS technology. It is packaged in a plastic SC-73 (SOT223) form factor and is designed and qualified to the appropriate AEC standard for use in automotive critical applications.
Key features include AEC Q101 compliance, electrostatic robustness due to integrated protection diodes, and low conduction losses resulting from a low on-state resistance. The device is suitable for automotive and general-purpose power switching applications.
All NXP BUK9880-55 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
Is the BUK9880-55 compliant with automotive standards?
Yes, the product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
What is the maximum drain current at 25 °C?
The maximum drain current is 75 A at 25 °C.
What is the primary application of the BUK9880-55?
It is designed for automotive and general purpose power switching applications.
Is the BUK9880-55 compliant with automotive standards?
Yes, it is designed and qualified to the appropriate AEC standard for use in automotive critical applications.