Key facts
- Brand
- NXP
- Model
- BUK963R2-40B
- Category
- FET
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2014-05-23
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NXP BUK963R2-40B TrenchMOS FET Datasheet
The NXP BUK963R2-40B is a logic level N-channel enhancement mode Field-Effect Transistor (FET) utilizing TrenchMOS technology. It is designed and qualified to the appropriate AEC standard for use in automotive critical applications, featuring low conduction losses and suitability for logic level gate drive sources. The device is rated for thermally demanding environments with a junction temperature of 175 °C.
Read onlineAll NXP BUK963R2-40B documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the primary application of this FET?
It is designed and qualified for use in automotive critical applications.
Is this device suitable for logic level gate drives?
Yes, it is suitable for logic level gate drive sources.
What is the maximum junction temperature rating for this FET?
The device has a maximum junction temperature rating of 175 °C.
What is the maximum total power dissipation at a mounting base temperature of 25 °C?
The maximum total power dissipation is 300 W when the mounting base temperature is 25 °C.