Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
The document describes the NXP BUK9E3R2-40B, a logic-level N-channel enhancement mode Field-Effect Transistor (FET) utilizing TrenchMOS technology. It is packaged in plastic and qualified to AEC standards specifically for use in automotive critical applications.
The device is rated for a maximum junction temperature of 175 °C.
The maximum drain-source voltage is 40 V.