Key facts
- Brand
- NXP
- Model
- BUK964R7-80E
- Category
- TrenchMOS
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2014-05-23
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NXP BUK964R7-80E FET Datasheet
This document is a product data sheet for the NXP BUK964R7-80E, an N-channel TrenchMOS logic level FET housed in a SOT404 package. The device is qualified to the AEC Q101 standard specifically for use in high-performance automotive systems.
The datasheet provides comprehensive technical specifications including electrical characteristics such as drain-source voltage (80 V), drain current (120 A), and on-state resistance. It also details thermal properties, pin configurations, and safe operating areas to support design engineers.
NXP BUK964R7-80E specifications
| Package type | SOT404 (D2PAK) |
|---|---|
| Technology | TrenchMOS |
| Junction temperature rating | 175 °C |
| Gate-source threshold voltage (VGS(th)) | > 0.5 V at 175 °C |
Source: NXP BUK964R7-80E TrenchMOS Logic Level MOSFET Datasheet
All NXP BUK964R7-80E documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the primary application of this FET?
It is designed and qualified for use in high-performance automotive applications.
Is this device logic level?
Yes, it is a logic level N-channel MOSFET with a gate-source threshold voltage rating greater than 0.5V at 175 °C.
What is the maximum junction temperature rating for this MOSFET?
The product is rated for a maximum junction temperature of 175 °C.
From: NXP BUK964R7-80E TrenchMOS Logic Level MOSFET Datasheet