NXP BUK98150-55A TrenchMOS Datasheet

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.


NXP BUK98150-55A TrenchMOS Datasheet - cover page
Brand
NXP
Category
TrenchMOS
Document type
Datasheet
Language
English
Pages
14
File format
PDF
File size
325 KB
Published
26 May, 2014
Updated
25 September, 2023
MD5 checksum
DAE191DA2034180CB25F2854E03AB566

About this manual

The document describes the BUK98150-55A, a logic-level N-channel enhancement mode Field-Effect Transistor (FET) utilizing TrenchMOS technology. It is packaged in plastic SC-73 (SOT223) and qualified to AEC standards for use in automotive critical applications.

What's inside

  • General description
  • Features and benefits
  • Applications
  • Quick reference data
  • Pinning information
  • Ordering information
  • Limiting values
  • Thermal characteristics
  • Characteristics

Specifications

Package typeSC-73 plastic surface-mounted package with increased heatsink; 4 SOT 223 leads

Frequently asked questions

What is the primary application of this FET?

It is suitable for automotive and general purpose power switching, including motors, lamps, and solenoids.

Is this device compatible with logic level gate drive sources?

Yes, it is suitable for logic level gate drive sources due to its low on-state resistance.

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