Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
The NXP BUK98150-55A is a logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. It is designed and qualified to the appropriate AEC standard for use in automotive critical applications, featuring low conduction losses due to low on-state resistance and suitability for logic level gate drive sources.
This document provides technical specifications, pinning information, ordering details, and electrical characteristics for the device. Key applications include 12 V and 24 V loads, automotive and general purpose power switching, as well as driving motors, lamps, and solenoids.
| Package type | SC-73 (SOT223) |
|---|---|
| Technology | TrenchMOS |
Yes, the product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
The maximum total power dissipation is 8 W when the temperature is 25 °C.
The maximum drain-source voltage is 55 V under conditions where the junction temperature is at least 25 °C and at most 150 °C.
The maximum continuous drain current is 5.5 A when the gate-source voltage is 5 V and the temperature is 25 °C.