Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
This document is a product datasheet for the NXP BUK963R2-40B, an N-channel enhancement mode Field-Effect Transistor (FET). The device utilizes TrenchMOS technology and is qualified to AEC standards for use in automotive critical applications. Key features include low conduction losses due to a low on-state resistance and suitability for logic level gate drive sources.
The device has a maximum junction temperature rating of 175 °C.
The maximum total power dissipation is 300 W when the mounting base temperature is 25 °C.