Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications
The NXP BUK963R2-40B is a logic level N-channel enhancement mode Field-Effect Transistor (FET) utilizing TrenchMOS technology. It is designed and qualified to the appropriate AEC standard for use in automotive critical applications, featuring low conduction losses and suitability for logic level gate drive sources. The device is rated for thermally demanding environments with a junction temperature of 175 °C.
| Package type | D2PAK plastic |
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It is designed and qualified for use in automotive critical applications.
Yes, it is suitable for logic level gate drive sources.
The device has a 175 °C rating for thermally demanding environments.