National Semiconductor LM5111 Manuals

The LM5111 is a dual 5A compound gate driver from TI. It integrates MOS and bipolar transistors and can independently drive two N-channel MOSFETs. The device has a 5A sink/3A source current capability and can be operated in parallel to double the drive current capability. Additionally, it features TTL-compatible independent inputs, fast propagation times (typical 25ns), fast rise and fall times (14ns/12ns rise/fall, load 2nF), supply rail under-voltage lockout protection (UVLO), LM5111-4 UVLO configured to drive PFET through OUT_A and NFET through OUT_B and pin compatibility with industry standard gate drivers.

The product is a dual 5A compound gate driver that can drive two N-channel MOSFETs. It has a 5A sinking current/3A source current capability, inputs and outputs can be connected in parallel, dual non-inverting, dual inverting and combination configurations, and has power rail under-voltage lockout protection, and is pin compatible with industry standard gate drivers.