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- LM5111
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- Last added
- 2012-04-09
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National LM5111 Dual Gate Driver Datasheet
The LM5111 is a dual gate driver that combines MOS and bipolar transistors to deliver high peak output currents with low variation across voltage and temperature. It offers independent control of two N‑Channel MOSFETs, 5 A sink and 3 A source capability, and can be paralleled to double drive current.
The device is supplied in SOIC‑8 and thermally enhanced MSOP8‑EP packages and includes under‑voltage lockout protection, fast propagation (≈25 ns), and configurable output polarity for a range of power‑management applications.
National Semiconductor LM5111 specifications
| Peak Sink Current | 5 A |
|---|---|
| Peak Source Current | 3 A |
| Propagation Delay (typical) | 25 ns |
| Rise Time | 14 ns |
| Fall Time | 12 ns |
| Supply Voltage Range | 3.5 V – 14 V |
| Package Options | SOIC‑8, Thermally Enhanced MSOP8‑EP |
All National Semiconductor LM5111 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the peak sink current of the LM5111?
The LM5111 can sink up to 5 A of peak current.
What package types are available for the LM5111?
It is offered in SOIC‑8 and thermally enhanced MSOP8‑EP packages.
What is the peak sink current capability of the LM5111?
The LM5111 can sink up to 5 A peak current.
What is the typical propagation delay of the driver outputs?
Typical propagation delay is about 25 ns.